Quantitative Control of Plasma and Surface Reactions for Dielectric Film Etching

Abstract

This paper briefly outlines the development history of dielectric film dry etching equipment and processes. In the 1980s and 90s, the high density plasma sources to increase the etch rate of SiO2, and the method to suppress excessive dissociation of gas molecules to achieve high selectivity were realized. With the advent of low-k materials around 2000, a model for more delicate control of surface reactions have been proposed. From 2010 onwards, techniques for predicting damage have been required. More recently, there have been active discussions about SiO2 ALE. We believe that technologies such as plasma monitoring, modeling, and prediction technologies will be further improved, and future atomic-level manufacturing technologies will be realized.