0.26-inch LED Microdisplay using Pixel Level Cu-Cu Connections of Transferred GaN/Si and CMOS Backplane Wafer
Abstract
We have developed an integration process for LED Microdisplaytoward AR application. This process consists of Cu-Cu hybridization to connect heterogeneous materials; a transferred GaN/Si wafer and a CMOS backplane wafer, followed by the fabrication of LED mesa and On Chip Lense(OCL). We report the key features and results of this process and present a prototype of 0.26-inch 5644 ppi LED Microdisplay.
- Author
- Company
- Sony Semiconductor Solutions Corporation
- Conference
- SID Display Week
- Year
- 2025
