Effect of Ar or Kr desorption steps on SiN ALE performances and its damage generation

Abstract

ALE enables atomic-precision control of surface reaction and low damage etching of underlying layer in device fabrication. So far, ALE has generally used the gas chemistry used in CW etching for the adsorption step and Ar for the desorption step.
However, the gas chemistry suitable for ALE is unknown. In this study, we investigated the effect of Ar or Kr desorption steps on SiN ALE performances and its damage generation.