Modeling and simulation of coverage and film property in deposition process on large-scale pattern using statistical ensemble method

Abstract

We modeled the deposition processes of dielectric films with a statistical ensemble method to predict the coverage and film properties on a large-scale pattern for the first time. We used the model to analyze the characteristic variation between the morphology and film density of SiN in low- temperature plasma-enhanced CVD with a SiH4/NH3 gas mixture with different the SiH4 flow rates, which was not found in SiO2 films. Our simulation results suggest that the mass of precursor particles in the gas phase largely affects the surface migration and morphology formation.

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