An X-Band Low-Voltage Gan Hemt Stacked Power Amplifier Operating in Class-J with Active Second Harmonic Injection

Abstract

This paper describes a stacked power amplifier (PA) operating in Class-J mode over 9.0−10.0GHz in which the efficiency of the PA is enhanced by active second harmonic (2f) injection. Sony's GaN HEMT technology is employed to obtain high power at low supply voltage. A small-signal gain of 24.0 dB with continuous-wave saturation output power of 34.2 dBm and power-added efficiency of 56.2 % together with a final stage drain efficiency of higher than 70 % are achieved at 9.5 GHz at a supply voltage of 5 V. The chip size is 1.2mm².

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