Bonding Strength of Cu-Cu Hybrid Bonding for 3D Integration Process

Abstract

Cu-Cu hybrid bonding is a significant technology in the manufacture of 3D stacked semiconductor devices and is indispensable for the integration of 3D heterogeneous stacked packages.1 A process is used to thin the bonded semiconductor during 3D stacking integration, but delamination can occur when the bonding strength of the bonded interface is insufficient.
Therefore, the bonding strength is a key factor in the 3D stacked integration process, and mechanisms for improving the strength have been thoroughly investigated.

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