Current injection laser oscillation of 1.55 μm InAs quantum dot vertical-cavity surface-emitting lasers

Abstract

We have successfully demonstrated, for the first time, current injection laser oscillation in a 1.55 μm VCSEL using InAs quantum dot active layers grown on an InP(311)B substrate.

View Publication

所属
Sony Semiconductor Solutions Corporation
学会・学術誌
CLEO
2024