Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application

Abstract

InGaN quantum well (QW) based vertical-cavity surface-emitting lasers, which are usually fabricated on the c-plane GaN substrates, have a problem of unstable polarization since the c-plane has high symmetry. A candidate for solving this problem is to introduce optical anisotropy by breaking the six-fold symmetry of c-plane InGaN-QWs. In this study, we proposed that the anisotropic strain can be introduced by bending InGaN-QWs so that lasing polarization can be stabilized, and we have performed demonstrative optical measurements of such polarization control in InGaN-QWs. From the results of the experiment, we have determined the deformation potentials of InGaN alloy materials.

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