Extending the Use Case for GaN Devices to Low Power Applications
Abstract
So far, the focus of GaN (Gallium Nitride) processes have been towards the infrastructure and military applications that require high power and performance.
However, the ever increasing demands of higher data throughputs and features mean that it is battery and power constrained terminals and equipment that will most benefit from the increased efficiency and power density of these high performance processes.
The challenges of low voltage operation need to first be overcome, in addition to other technical and commercial barriers.
This presentation will highlight the high performance low voltage operation of a GaN on Silicon device and how, with appropriate circuit topologies,
it can readily address the future challenges of low power consumer and infrastructure applications.
- 所属
- Sony Semiconductor Solutions Corporation
- Sony Semiconductor Solutions Europe
- 学会・学術誌
- ARMMS
- 年
- 2024
