How etch-plasma researchers view plasma and how it can be applied to deposition

Abstract

The dissociation of SiH4 gas and its surface reaction during the plasma enhanced-chemical vapor deposition (PECVD) process are examined. Prior experimental studies on the deposition processes of a-Si:H and a-C:H are reviewed, drawing an analogy to dry etching. Furthermore, as latest application of numerical simulation to SiN-PECVD, Sony’s deposition model and its use in analyzing film properties are presented.

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