Noise Performance Improvements of 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Non-doped Pixel-FinFETs
Abstract
For the first time, 2-Fin non-doped Pixel-Fin field-effect-transistors are introduced into a 2-Layer Transistor Pixel stacked CMOS image sensor for better noise performance. Thanks to the non-doped channel and wider channel width, a 2.42-time transconductance improvement, 15% random noise and 99.3% random telegraph signal reductions are obtained.
- 著者
- 所属
- Sony Semiconductor Solutions Corporation
- Sony Semiconductor Manufacturing Corporation
- 学会・学術誌
- VLSI
- 年
- 2023
