Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers
Abstract
The capture-excitation processes of carriers are implemented in self-consistent Monte Carlo device simulations. The carrier transfer characteristics in n-type resistors and CMOS image sensors (CISs) are simulated. The long tail observed in experiments in time evolutions of the number of residual carriers has been successfully reproduced.
- 著者
-
- Futo Hashimoto
- Toma Suzuki
- Hideki Minari
- Nobuya Nakazaki
- Jun Komachi
- Nobuyuki Sano *
- 所属
- Sony Semiconductor Solutions Corporation
- 学会・学術誌
- SISPAD
- 年
- 2023
