Study of 2 x 4 μm Pitch Capsule Shaped TSVs and 2 μm Pitch TSVs in WoWoW Integration

Abstract

We have successfully developed the via last TSVs integration technology which consists of 2×4μ m pitch capsule shaped TSVs and 2μ m pitch circular TSVs for the first time. The capsule shaped TSVs has higher conductance per area by 55 % than 2μ m pitch circular TSVs. Circular TSVs are advantageous for fine pitch layout. Capsule-shaped TSVs are advantageous in terms of conductive performance and TDDB reliability. The integration of circular TSVs and capsule-shaped TSVs takes all these advantages. This integration technology is expected to increase current capacity and improve signal transmission efficiency in 3D stacked circuits.

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